Biography
Dr. Dani Samer Assi is a Lecturer in the School of Science and Technology at Hong Kong Metropolitan University. He received his PhD in Electrical and Electronic Engineering from the University of Glasgow. His research focuses on advanced materials for next-generation electronic systems, particularly neuromorphic electronics, quantum technologies, and plasmonic sensing devices.
Dr. Assi has authored numerous SCI-indexed publications in leading journals including Advanced Materials, Advanced Science, ACS Nano, and Materials Horizons. His work on neuroelectronic synaptic modulators and brain-computer interfaces has received international recognition, including Editor’s Choice in Advanced Materials and coverage by Advanced Science News.
He is the Principal Investigator of several competitive research projects funded by organisations such as the Research Grants Council and the University Grants Committee, focusing on neuromorphic devices, quantum sensing technologies, and advanced plasmonic platforms.
Dr. Assi is also a recipient of the President’s Award for Excellence in Inspirational Teaching (2024) at HKMU and actively engages in interdisciplinary collaborations with international universities and industry partners
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I am looking for highly motivated PhD students, Postdoctoral Researchers, and Research Assistants to join my research group. Please feel free to contact me via email.
Teaching Areas & Research Interests
- Advanced Materials Engineering
- Neuromorphic Computing and Electronics
- Quantum Technologies and Plasmonic Sensing
Selected Publications
Journal Articles
- D. S. Assi, H. Huang, V. Karthikeyan, V. C. S. Theja, M. M. de Souza, V. A. L. Roy, Topological Quantum Switching Enabled Neuroelectronic Synaptic Modulators for Brain Computer Interface. Adv. Mater. 2024, 2306254. https://doi.org/10.1002/adma.202306254
- D. S. Assi, H. Huang, V. Karthikeyan, V. C. S. Theja, M. M. de Souza, N. Xi, W. J. Li, V. A. L. Roy, Quantum Topological Neuristors for Advanced Neuromorphic Intelligent Systems. Adv. Sci. 2023, 10, 2300791. https://doi.org/10.1002/advs.202300791
- D. S. Assi, M. P. Haris, V. Karthikeyan, S. Kazim, S. Ahmad, V. A. L. Roy, Low Switching Power Neuromorphic Perovskite Devices with Quick Relearning Functionality. Adv. Electron. Mater. 2023, 9, 2300285. https://doi.org/10.1002/aelm.202300285
- D. S. Assi, Huang, H., Kandira, K.U., Alsulaiman, N.S., Theja, V.C.S., Abbas, H., Karthikeyan, V. and Roy, V.A.L. (2023), Charge-Mediated Copper-Iodide-Based Artificial Synaptic Device with Ultrahigh Neuromorphic Efficacy. Phys. Status Solidi RRL, 17: 2300191. https://doi.org/10.1002/pssr.202300191
- V. C. S. Theja, D. S. Assi, H. Huang, R. S. Alsulami, B. J. Chen, C. H. Chan, C.-H. Shek, V. Karthikeyan, V. A. L. Roy, 3D Architectural MXene-based Composite Films for Stealth Terahertz Electromagnetic Interference Shielding Performance. Adv. Mater. Interfaces 2023, 10, 2300440. https://doi.org/10.1002/admi.202300440
- V. C. S. Theja, V. Karthikeyan, D. S. Assi, H. Huang, V. Kannan, Y. Chen, C.-H. Shek, V. A. L. Roy, 2D MXene Interface Engineered Bismuth Telluride Thermoelectric Module with Improved Efficiency for Waste Heat Recovery. Adv. Mater. Technol. 2024, 2301722. https://doi.org/10.1002/admt.202301722
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